NTB30N20T4G
MOSFET N-CH 200V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N20T4G is a high-performance N-Channel Power MOSFET designed for demanding applications. This device offers a 200V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C ambient temperature. Featuring a low on-resistance of 81mOhm maximum at 15A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, suitable for efficient thermal management with a maximum power dissipation of 214W at 25°C case temperature. Key electrical parameters include a gate charge of 100 nC (typical) at 10V and input capacitance (Ciss) of 2335 pF (typical) at 25V. The NTB30N20T4G is engineered for use in power supply, automotive, and industrial motor control applications. It operates across a wide temperature range from -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 25 V |
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