NTB30N20G
MOSFET N-CH 200V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N20G is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current capability of 30A at 25°C (Ta), with an Rds(On) of 81mOhm at 15A and 10V. The device operates with a gate drive of 10V and has a maximum gate-source voltage of ±30V. With a maximum junction temperature of 175°C, it offers robust thermal performance, dissipating up to 2W (Ta) or 214W (Tc). The NTB30N20G utilizes MOSFET technology and is housed in a surface mount D2PAK (TO-263-3) package, suitable for automated assembly processes. Its key electrical parameters include an input capacitance (Ciss) of 2335pF (Max) at 25V and a gate charge (Qg) of 100nC at 10V. This component is widely used in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 25 V |
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