NTB30N20
MOSFET N-CH 200V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N20 is an N-Channel Power MOSFET designed for demanding applications with a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 30 A at 25°C. This device features a low on-resistance of 81 mOhm maximum at 15 A and 10 V gate drive, with a Gate Charge (Qg) of 100 nC maximum at 10 V. Optimized for thermal performance, it offers a maximum power dissipation of 2 W (Ta) and 214 W (Tc). The NTB30N20 is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient heat dissipation. Its robust construction and electrical characteristics make it suitable for use in power supply units, motor control, and industrial power applications. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 25 V |
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