NTB30N06T4G
MOSFET N-CH 60V 27A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N06T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 27A at 25°C (Ta). With a low on-resistance (Rds On) of 42mOhm at 15A and 10V Vgs, it minimizes conduction losses. The device is housed in a surface-mount D2PAK (TO-263-3) package, facilitating efficient thermal management with a maximum power dissipation of 88.2W (Tc). Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V. It operates across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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