NTB30N06LT4G
MOSFET N-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB30N06LT4G is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 30 A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 46 mOhm at 15 A and 5 Vgs, it offers low conduction losses. The Gate Charge (Qg) is rated at 32 nC maximum at 5 V, and the Input Capacitance (Ciss) is 1150 pF maximum at 25 V. The NTB30N06LT4G is packaged in a TO-263-3, D2PAK (TO-263AB) surface mount configuration, with a maximum power dissipation of 88.2 W (Tc). This component is suitable for use in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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