NTB30N06LT4
MOSFET N-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N06LT4 is a 60V N-Channel Power MOSFET. This device features a continuous drain current of 30A (Ta) at 25°C and a maximum power dissipation of 88.2W (Tc). With a low on-resistance of 46mOhm @ 15A, 5V, it is optimized for efficient switching applications. The NTB30N06LT4 utilizes a D2PAK surface mount package (TO-263-3, D2PAK) for thermal management. Key parameters include a gate charge of 32 nC @ 5 V and an input capacitance of 1150 pF @ 25 V. This MOSFET is suitable for use in automotive and industrial power supply applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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