NTB30N06LG
MOSFET N-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB30N06LG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 30A at 25°C. With a maximum power dissipation of 88.2W (Tc), it is suitable for high-power switching and control. The Rds On is specified at 46mOhm maximum at 15A and 5V Vgs, indicating low conduction losses. Key parameters include a Gate Charge (Qg) of 32 nC maximum at 5V Vgs and an input capacitance (Ciss) of 1150 pF maximum at 25V Vds. This device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package. The NTB30N06LG is commonly found in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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