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NTB30N06L

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NTB30N06L

MOSFET N-CH 60V 30A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB30N06L is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 30A at 25°C (Ta). With a maximum Drain-Source On-Resistance (Rds On) of 46mOhm at 15A and 5V gate drive, it minimizes conduction losses. The NTB30N06L boasts a low gate charge (Qg) of 32 nC at 5V and input capacitance (Ciss) of 1150 pF at 25V, facilitating fast switching speeds. Its maximum power dissipation is 88.2W (Tc). The TO-263-3, D2PAK (TO-263AB) package with surface mount capability ensures robust thermal performance and ease of assembly in demanding environments. This component is suitable for use in automotive, industrial power supplies, and motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Rds On (Max) @ Id, Vgs46mOhm @ 15A, 5V
FET Feature-
Power Dissipation (Max)88.2W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V

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