NTB27N06LT4
MOSFET N-CH 60V 27A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB27N06LT4 is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 27A at 25°C. With a low on-resistance of 48mOhm maximum at 13.5A and 5V gate drive, it minimizes conduction losses. The MOSFET offers a gate charge of 32nC and input capacitance of 990pF, facilitating efficient switching. Its D2PAK (TO-263-3) surface mount package allows for robust thermal performance, with a maximum power dissipation of 88.2W. Operating across a wide temperature range from -55°C to 175°C, the NTB27N06LT4 is suitable for power management, automotive, and industrial control systems. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 13.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |