NTB25P06
MOSFET P-CH 60V 27.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB25P06 is a P-Channel Power MOSFET designed for high-performance switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 27.5 A at 25°C (Ta). The NTB25P06 exhibits a low on-resistance of 82 mOhm maximum at 25 A and 10 V. With a maximum power dissipation of 120 W (Tj), it is suitable for demanding thermal environments. Key parameters include a Gate Charge (Qg) of 50 nC maximum at 10 V and an Input Capacitance (Ciss) of 1680 pF maximum at 25 V. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB for surface mounting. Operating temperature ranges from -55°C to 175°C (Tj). Industries utilizing this component include automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |
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