NTB23N03RT4G
MOSFET N-CH 25V 23A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB23N03RT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 23 A at 25°C ambient temperature. Its low on-resistance (Rds On) of 45 mOhm at 6 A and 10 V Vgs, coupled with a maximum power dissipation of 37.5 W at junction temperature, makes it suitable for power management in automotive and industrial systems. The device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package for efficient thermal performance. Key parameters include a gate charge (Qg) of 3.76 nC at 4.5 V and input capacitance (Ciss) of 225 pF at 20 V Vds. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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