NTB23N03RG
MOSFET N-CH 25V 23A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB23N03RG is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) of 23 A at 25°C. The Rds On is specified at a maximum of 45 mOhm at 6 A and 10 V gate drive. With a maximum power dissipation of 37.5 W (Tj), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a Gate Charge (Qg) of 3.76 nC at 4.5 V and Input Capacitance (Ciss) of 225 pF at 20 V. The threshold voltage (Vgs(th)) is a maximum of 2 V at 250 µA, with a maximum Gate-to-Source Voltage (Vgs) of ±20 V. The NTB23N03RG is provided in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds application in various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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