NTB23N03R
MOSFET N-CH 25V 23A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB23N03R is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current (Id) of 23 A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 45 mOhm at 6 A and 10 V, the NTB23N03R offers efficient power handling. Gate drive is supported from 4.5 V to 10 V. Key electrical characteristics include a maximum power dissipation of 37.5 W (Tj) and a Gate Charge (Qg) of 3.76 nC at 4.5 V. Input capacitance (Ciss) is rated at a maximum of 225 pF at 20 V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, making it suitable for power management solutions in automotive and industrial sectors. The maximum Gate-to-Source Voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 2 V at 250 µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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