NTB22N06T4
MOSFET N-CH 60V 22A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB22N06T4 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 22 A at 25°C (Ta), with a maximum power dissipation of 60W (Tj). The low Rds On of 60 mOhm at 11 A and 10 V Vgs makes it suitable for efficient power switching. Key characteristics include a Gate Charge (Qg) of 32 nC maximum at 10 V and an input capacitance (Ciss) of 700 pF maximum at 25 V. The device utilizes Metal Oxide technology and is housed in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied on tape and reel. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |