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NTB22N06LT4

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NTB22N06LT4

MOSFET N-CH 60V 22A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB22N06LT4 is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C, this component offers a low on-resistance (Rds On) of 65mOhm at 11A and 5V gate drive. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface-mount package, suitable for efficient thermal management with a maximum power dissipation of 60W. Key electrical characteristics include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 690 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial power control, and power supply applications. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 11A, 5V
FET Feature-
Power Dissipation (Max)60W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 25 V

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