NTB18N06T4G
MOSFET N-CH 60V 15A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB18N06T4G is an N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C (Tc), this device offers robust performance. The Rds(on) is specified at a maximum of 90mOhm at 7.5A and 10V gate drive. Input capacitance (Ciss) is a maximum of 450pF at 25V, with a gate charge (Qg) of 22nC at 10V. The power dissipation (Pd) capability is 48.4W at 25°C (Tc). This MOSFET utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package. It operates across a wide temperature range of -55°C to 175°C (TJ). The NTB18N06T4G is commonly found in power management, automotive, and industrial control systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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