NTB18N06T4
MOSFET N-CH 60V 15A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB18N06T4 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and supports a continuous drain current (Id) of 15 A at 25°C. With a maximum power dissipation of 48.4 W (Tc), it is engineered for efficient thermal management. The Rds On is specified at a maximum of 90 mOhm at 7.5 A and 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 22 nC and input capacitance (Ciss) of 450 pF, both specified at 10 V and 25 V respectively. The NTB18N06T4 utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. It operates across a wide temperature range of -55°C to 175°C (TJ) and is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
