NTB18N06LT4G
MOSFET N-CH 60V 15A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB18N06LT4G is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C (Tc). The Rds On is specified at a maximum of 100 mOhm at 7.5A and 5V Vgs. Key parameters include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 440 pF at 25V. The device is housed in a TO-263-3, D2PAK (TO-263AB) surface mount package, supporting a maximum power dissipation of 48.4W (Tc). Its operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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