NTB18N06
MOSFET N-CH 60V 15A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB18N06 is a robust N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C (Tc). With a maximum power dissipation of 48.4W (Tc) and a low on-resistance (Rds On) of 90mOhm at 7.5A and 10V Vgs, it ensures efficient power handling. The gate charge (Qg) is rated at 22 nC maximum at 10V Vgs, and input capacitance (Ciss) is 450 pF maximum at 25V Vds. Operating across a wide temperature range from -55°C to 175°C (TJ), the NTB18N06 is housed in a TO-263-3, D2PAK (2 Leads + Tab) package, suitable for surface mounting. This device finds application in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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