NTB13N10T4G
MOSFET N-CH 100V 13A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB13N10T4G is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 13A at 25°C, with a maximum power dissipation of 64.7W. The on-resistance (Rds On) is specified at a maximum of 165mOhm at 6.5A and a gate-source voltage (Vgs) of 10V. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and an input capacitance (Ciss) of 550 pF (max) at 25V. The NTB13N10T4G utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64.7W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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