NTB13N10G
MOSFET N-CH 100V 13A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB13N10G is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 13A at 25°C, this component offers a maximum on-resistance (Rds On) of 165mOhm at 6.5A and 10V gate drive. The device boasts a low gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 550 pF at 25V. Its robust construction supports a maximum power dissipation of 64.7W (Ta) and operates within a temperature range of -55°C to 175°C. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), the NTB13N10G is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64.7W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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