NTB13N10
MOSFET N-CH 100V 13A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB13N10, a N-Channel Power MOSFET, offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 13 A at 25°C. This device features a maximum power dissipation of 64.7 W (Ta) and a low on-resistance (Rds On) of 165 mOhm at 6.5 A, 10 V. The NTB13N10 utilizes Metal Oxide technology and has a gate charge (Qg) of 20 nC at 10 V. Its input capacitance (Ciss) is a maximum of 550 pF at 25 V. The NTB13N10 is available in a TO-263-3, D2PAK surface mount package, suitable for demanding applications in industries such as automotive, industrial power control, and power supply units. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64.7W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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