NTB125N02RT4G
MOSFET N-CH 24V 95A/120.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB125N02RT4G is a N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 24 V and offers continuous drain current capabilities of 95 A at ambient temperature (Ta) and 120.5 A at case temperature (Tc). With a maximum on-resistance (Rds On) of 4.6 mOhm at 20 A and 10 V, it provides efficient power switching. The MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 28 nC at 4.5 V and input capacitance (Ciss) of 3440 pF at 20 V. Power dissipation is rated at 1.98 W (Ta) and 113.6 W (Tc). This component is utilized in industries such as automotive, industrial power supplies, and power management systems. The NTB125N02RT4G operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Ta), 120.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.98W (Ta), 113.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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