NTB125N02RG
MOSFET N-CH 24V 95A/120.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB125N02RG is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 24V and a continuous drain current of 95A at a case temperature of 25°C, or 120.5A at a case temperature of 25°C. With a maximum on-resistance (Rds On) of 4.6mOhm at 20A and 10V, it offers low conduction losses. The gate drive voltage range is specified from 4.5V to 10V. Key parameters include a gate charge (Qg) of 28nC at 4.5V and an input capacitance (Ciss) of 3440pF at 20V. The power dissipation is rated at 1.98W (Ta) and 113.6W (Tc). Housed in a TO-263-3, D2PAK package, this MOSFET is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. It finds application in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Ta), 120.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.98W (Ta), 113.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
