NTB125N02R
MOSFET N-CH 24V 95A/120.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB125N02R is an N-Channel Power MOSFET designed for demanding applications. This component features a 24V Drain-to-Source Voltage (Vdss) and supports continuous drain current ratings of 95A at 25°C ambient (Ta) and 120.5A at 25°C case temperature (Tc). The low on-resistance of 4.6mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 28nC at 4.5V Vgs and input capacitance (Ciss) of 3440pF at 20V Vds. Power dissipation capabilities are 1.98W (Ta) and 113.6W (Tc). The NTB125N02R is housed in a TO-263-3, D2PAK surface mount package, enabling efficient thermal management. It operates across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial power, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Ta), 120.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.98W (Ta), 113.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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