NTAT6H406NT4G
MOSFET N-CH 80V 175A ATPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET featuring 80V drain-source breakdown voltage and 175A continuous drain current at 25°C ambient. This device offers a low on-resistance of 2.9mOhm maximum at 50A and 10V gate drive. Key parameters include 110 nC maximum gate charge and 8040 pF maximum input capacitance. The NTAT6H406NT4G is housed in a surface-mount ATPAK (TO-252-3) package, suitable for demanding applications requiring high current handling and thermal performance, dissipating up to 90W at the case temperature. Operating temperature range is -55°C to 150°C. This component is utilized across various industries including industrial power supplies, automotive systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK/ATPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8040 pF @ 40 V |
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