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NTA4153NT3G

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NTA4153NT3G

MOSFET N-CH 20V 915MA SC75

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTA4153NT3G is an N-Channel MOSFET designed for efficient switching applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 915mA at 25°C (Ta). It offers a low on-resistance of 230mOhm maximum at 600mA, 4.5V Vgs. The device utilizes a surface mount SC-75, SOT-416 package, providing a compact footprint suitable for various electronic designs. Key electrical parameters include a gate charge of 1.82 nC maximum at 4.5V and an input capacitance of 110 pF maximum at 16V. With a power dissipation of 300mW (Tj) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is well-suited for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C915mA (Ta)
Rds On (Max) @ Id, Vgs230mOhm @ 600mA, 4.5V
FET Feature-
Power Dissipation (Max)300mW (Tj)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageSC-75, SOT-416
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±6V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 16 V

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