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NTA4153NT1

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NTA4153NT1

MOSFET N-CH 20V 915MA SC75

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTA4153NT1 is a 20 V N-Channel MOSFET designed for efficient switching applications. This component features a continuous drain current (Id) of 915mA at 25°C and a maximum on-resistance (Rds On) of 230mOhm at 600mA and 4.5V Vgs. The gate charge (Qg) is specified at 1.82 nC maximum at 4.5 V, and input capacitance (Ciss) is 110 pF maximum at 16 V. The MOSFET is housed in a compact SC-75, SOT-416 surface mount package, enabling high-density board designs. It operates within a temperature range of -55°C to 150°C (Tj) and offers a power dissipation of 300mW (Tj). This device is suitable for use in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C915mA (Ta)
Rds On (Max) @ Id, Vgs230mOhm @ 600mA, 4.5V
FET Feature-
Power Dissipation (Max)300mW (Tj)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageSC-75, SOT-416
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±6V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 16 V

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