NTA4151PT1
MOSFET P-CH 20V 760MA SC75Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTA4151PT1 is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 760mA at 25°C (Tj). The device offers a low on-resistance (Rds On) of 360mOhm maximum at 350mA and 4.5V Vgs, with a specified gate drive range from 1.8V to 4.5V. It is supplied in an SC-75, SOT-416 surface mount package, suitable for compact designs. Key electrical parameters include a maximum Gate Charge (Qg) of 2.1 nC at 4.5V Vgs and a maximum Input Capacitance (Ciss) of 156 pF at 5V Vds. With a maximum power dissipation of 301mW (Tj), this MOSFET is engineered for operation across a wide temperature range from -55°C to 150°C (TJ). It finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Tj) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 301mW (Tj) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-75, SOT-416 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 5 V |