NSTR4501NT1G
MOSFET N-CH 20V 3.2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NSTR4501NT1G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source On Resistance (Rds On) of 80mOhm maximum at 3.6A and 4.5V Vgs, and a continuous drain current (Id) capability of 3.2A at 25°C (Ta). With a Vgs(th) of 1.2V maximum at 250µA, it offers efficient switching characteristics. The device has a Drain-to-Source Voltage (Vdss) of 20V and a gate charge (Qg) of 6nC maximum at 4.5V Vgs. Input capacitance (Ciss) is a maximum of 200pF at 10V Vds. Supplied in a SOT-23-3 (TO-236) package, this surface mount device is suitable for use in consumer electronics and industrial control systems. The NSTR4501NT1G is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
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