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NIF9N05CLT3G

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NIF9N05CLT3G

MOSFET N-CH 59V 2.6A SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NIF9N05CLT3G is an N-Channel Power MOSFET designed for versatile applications. This component features a Drain-to-Source Voltage (Vdss) of 59 V and a continuous drain current (Id) of 2.6 A at 25°C, with a maximum power dissipation of 1.69 W. The Rds On is specified at a maximum of 125 mOhm at 2.6 A and 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 7 nC at 4.5 V and an input capacitance (Ciss) of 250 pF at 35 V. This MOSFET operates within a temperature range of -55°C to 150°C. The NIF9N05CLT3G is supplied in a SOT-223 (TO-261) surface mount package, delivered in tape and reel. It is utilized in various industrial sectors, including automotive and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs125mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)1.69W (Ta)
Vgs(th) (Max) @ Id2.5V @ 100µA
Supplier Device PackageSOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)59 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 35 V

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