NIF9N05CLT1G
MOSFET N-CH 59V 2.6A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NIF9N05CLT1G is an N-channel MOSFET designed for power switching applications. It features a Drain-Source Voltage (Vdss) of 59V and a continuous Drain Current (Id) of 2.6A at 25°C. This device has a maximum On-Resistance (Rds On) of 125mOhm at 2.6A and 10V gate drive. The NIF9N05CLT1G is housed in a SOT-223 (TO-261) surface-mount package, offering a power dissipation of 1.69W. Key parameters include a Gate Charge (Qg) of 7nC at 4.5V and Input Capacitance (Ciss) of 250pF at 35V. This component is suitable for use in automotive and industrial control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.69W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 59 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 35 V |
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