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NDUL03N150CG

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NDUL03N150CG

MOSFET N-CH 1500V 2.5A TO3P

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NDUL03N150CG is an N-Channel Power MOSFET designed for high-voltage applications. It features a Drain-Source Voltage (Vdss) of 1500V and a continuous Drain Current (Id) of 2.5A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 10.5 Ohms at 1.25A and 10V Vgs, this component offers efficient switching. The gate charge (Qg) is specified at 34 nC maximum at 10V, and the input capacitance (Ciss) is 650 pF maximum at 30V. The device supports a gate-source voltage range of ±30V and operates at junction temperatures up to 150°C. Power dissipation is rated at 3W (Ta) and 50W (Tc). Packaged in a TO-3P(L) through-hole configuration, this MOSFET is suitable for power conversion and high-voltage switching circuits across various industries including industrial and automotive.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3PL
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs10.5Ohm @ 1.25A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-3P(L)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1500 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 30 V

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