NDTL01N60ZT3G
MOSFET N-CH 600V 250MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NDTL01N60ZT3G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a breakdown voltage of 600V and a continuous drain current capability of 250mA at 25°C, with a maximum power dissipation of 2W. The device exhibits a low on-resistance of 15 Ohms at 400mA and 10V Vgs, with typical gate charge of 4.9 nC and input capacitance of 92 pF. The NDTL01N60ZT3G is packaged in a SOT-223 (TO-261) surface mount package, suitable for automated assembly processes. It operates across a broad temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply circuits, lighting applications, and general-purpose switching designs where high voltage handling is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Tc) |
| Rds On (Max) @ Id, Vgs | 15Ohm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 92 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
