NDT455N
MOSFET N-CH 30V 11.5A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT455N is an N-channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 11.5A at 25°C ambient temperature. The NDT455N offers a low on-resistance of 15mOhm maximum at 11.5A and 10V Vgs, ensuring minimal conduction losses. It is available in a compact SOT-223-4 (TO-261-4) surface-mount package, dissipating up to 3W at 25°C ambient. Key parameters include a gate charge (Qg) of 61 nC maximum at 10V and input capacitance (Ciss) of 1220 pF maximum at 15V. It operates across a wide temperature range of -65°C to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 15 V |
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