NDT453N
MOSFET N-CH 30V 8A SOT-223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT453N is an N-channel MOSFET designed for demanding applications. This component features a 30 V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 8 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 28 mOhm at 8 A and 10 Vgs. It is supplied in a SOT-223-4 package for surface mounting, offering a power dissipation capability of 3 W. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 890 pF at 15 V. The operating temperature range is -65°C to 150°C. This MOSFET is suitable for use in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 15 V |
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