NDT452P
MOSFET P-CH 30V 3A SOT-223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDT452P is a P-Channel Power MOSFET designed for surface mount applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3A at 25°C. The Rds(on) is specified at a maximum of 180mOhm at 3A and 10V Vgs. Key electrical characteristics include a Gate Charge (Qg) of 25 nC (max) and Input Capacitance (Ciss) of 525 pF (max), both measured at 10V. The NDT452P utilizes MOSFET technology and is supplied in a SOT-223-4 package, also known as TO-261-4 or TO-261AA. This component is commonly found in power management circuits and general switching applications across various industries including consumer electronics and industrial automation. It is available in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 10 V |
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