NDT451N
MOSFET N-CH 30V 5.5A SOT-223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NDT451N is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 5.5 A at 25°C. The Rds(On) is specified at a maximum of 50 mOhm when conducting 5.5 A with a 10 V gate-source voltage. Key electrical characteristics include a maximum gate charge (Qg) of 25 nC at 10 V and a maximum input capacitance (Ciss) of 730 pF at 10 V. The threshold voltage (Vgs(th)) is 3 V at 250 µA. Packaged in a SOT-223-4 (TO-261-4, TO-261AA) surface-mount configuration, this device is supplied on tape and reel. This MOSFET is suitable for use in various industrial and consumer electronics where robust and reliable switching is required.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 10 V |
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