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NDT03N40ZT3G

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NDT03N40ZT3G

MOSFET N-CH 400V 500MA SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NDT03N40ZT3G is an N-Channel MOSFET designed for demanding applications. This component boasts a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) capability of 500mA at 25°C (Tc). Featuring a low on-resistance of 3.4 Ohms maximum at 600mA and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 2W (Tc). The device utilizes Surface Mount technology, packaged in a SOT-223 (TO-261) case, making it suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 6.6 nC maximum at 10V and an input capacitance (Ciss) of 140 pF maximum at 50V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, lighting control, and general-purpose switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Rds On (Max) @ Id, Vgs3.4Ohm @ 600mA, 10V
FET Feature-
Power Dissipation (Max)2W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageSOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 50 V

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