NDT02N60ZT3G
MOSFET N-CH 600V 300MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT02N60ZT3G is a 600V N-Channel Power MOSFET designed for efficient switching applications. This device offers a continuous drain current of 300mA (Tc) at 25°C and a maximum power dissipation of 2W (Tc). It features a low on-resistance of 8Ohm maximum at 700mA and 10V gate-source voltage. The MOSFET's gate charge is 7.4nC (Max) at 10V, with input capacitance rated at 170pF (Max) at 25V. The SOT-223 (TO-261) package simplifies surface mounting and is suitable for operation across a wide temperature range from -55°C to 150°C (TJ). This component is utilized in various industrial sectors, including power supplies and lighting control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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