NDT02N60ZT1G
MOSFET N-CH 600V 300MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT02N60ZT1G is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 300mA at 25°C (Tc). The NDT02N60ZT1G offers a maximum on-resistance (Rds On) of 8 Ohms at 700mA and 10V gate drive. Key parameters include a gate charge (Qg) of 7.4 nC (Max) at 10V and input capacitance (Ciss) of 170 pF (Max) at 25V. The component is housed in a SOT-223 (TO-261) surface mount package, supporting a maximum power dissipation of 2W. Its operating temperature range is -55°C to 150°C. This MOSFET is suitable for power supply circuits, lighting, and general-purpose power switching in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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