NDT02N40T1G
MOSFET N-CH 400V 400MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT02N40T1G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 400mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 5.5 Ohms when driven by 10V and conducting 220mA. With a gate charge of 5.5 nC at 10V, it offers efficient switching characteristics. The device is housed in a SOT-223 (TO-261) surface-mount package, suitable for high-density board layouts. Its 2W power dissipation capability at 25°C (Tc) makes it applicable in various power management circuits. This MOSFET is commonly utilized in industrial automation, consumer electronics, and power supply designs where reliable high-voltage switching is required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 121 pF @ 25 V |
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