NDT01N60T1G
MOSFET N-CH 600V 400MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDT01N60T1G is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 400mA at 25°C (Tc). With a maximum power dissipation of 2.5W (Tc), it is suitable for demanding environments. The MOSFET exhibits a typical Rds On of 8.5 Ohm at 200mA and 10V, and a gate charge of 7.2 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 160 pF at 25V. The NDT01N60T1G is provided in a SOT-223 (TO-261) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supplies and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 50µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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