NDS9405
MOSFET P-CH 20V 4.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS9405 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.3A at 25°C. With a maximum Power Dissipation (Pd) of 2.5W (Ta), it is suitable for power management in various electronics. Key parameters include a maximum Rds On of 100mOhm at 2A and 10V, and a Gate Charge (Qg) of 40nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1425pF at 10V. The NDS9405 utilizes MOSFET technology and is housed in an 8-SOIC package, designed for surface mounting. Its operating temperature range is from -55°C to 150°C (TJ). This device finds application in areas such as automotive systems, consumer electronics, and industrial controls.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 10 V |
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