NDS9400A
MOSFET P-CH 30V 3.4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS9400A is a P-Channel MOSFET designed for applications requiring efficient power switching. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3.4A at 25°C. The Rds On is specified at a maximum of 130mOhm at 1A and 10V Vgs. With a Gate Charge (Qg) of 25 nC at 10V and Input Capacitance (Ciss) of 350 pF at 10V Vds, it offers optimized switching characteristics. The maximum power dissipation is 2.5W at 25°C. This component is housed in an 8-SOIC package for surface mounting and operates within a temperature range of -55°C to 150°C. The NDS9400A is commonly utilized in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 10 V |
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