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NDS8434

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NDS8434

MOSFET P-CH 20V 6.5A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NDS8434 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 6.5A at 25°C. With a maximum Power Dissipation of 2.5W (Ta), it is supplied in an 8-SOIC package, measuring 3.90mm in width and presented on tape and reel. The NDS8434 exhibits a maximum Rds On of 35mOhm at 6.5A and 4.5V gate-source voltage. Key parameters include a Gate Charge (Qg) of 80 nC at 4.5V and an Input Capacitance (Ciss) of 2330 pF at 10V. It operates within a temperature range of -55°C to 150°C (TJ). This device finds application in areas such as power management and switching circuits across various electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 6.5A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2330 pF @ 10 V

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