NDS8410
MOSFET N-CH 30V 10A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS8410 is an N-Channel MOSFET designed for efficient power switching applications. Featuring a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C, this component offers a maximum on-resistance (Rds On) of 15mOhm at 10A and 10V Vgs. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of 20V. Key electrical parameters include a maximum gate charge (Qg) of 60 nC at 10V and an input capacitance (Ciss) of 1350 pF at 15V Vds. With a power dissipation rating of 2.5W, the NDS8410 is housed in an 8-SOIC package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET is utilized in various industries, including automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 15 V |
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