NDS356AP
MOSFET P-CH 30V 1.1A SUPERSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS356AP is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) capability of 1.1 A at 25°C. With a maximum power dissipation of 500mW (Ta), it is suitable for space-constrained designs. The Rds On specification is a maximum of 200mOhm at 1.3A and 10V Vgs. Key electrical parameters include a Gate Charge (Qg) of 4.4 nC (Max) at 5V and Input Capacitance (Ciss) of 280 pF (Max) at 10V. The device operates across a temperature range of -55°C to 150°C (TJ). The NDS356AP is supplied in a SOT-23-3 package, commonly used in consumer electronics, industrial automation, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 10 V |