NDS351N
MOSFET N-CH 30V 1.1A SUPERSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS351N is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 1.1A at 25°C. It offers a low on-resistance (Rds On) of 160mOhm maximum at 1.4A and 10V gate drive. With a gate charge (Qg) of 3.5 nC maximum at 5V and input capacitance (Ciss) of 140 pF maximum at 10V, the NDS351N is suitable for various power management tasks. The device operates across a temperature range of -55°C to 150°C and is supplied in a compact SOT-23-3 surface mount package. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 10 V |
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