NDS351AN
MOSFET N-CH 30V 1.4A SUPERSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS351AN is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 1.4 A at 25°C, with a maximum power dissipation of 500 mW (Ta). The NDS351AN exhibits a low on-resistance (Rds On) of 160 mOhm at 1.4 A and 10 V gate drive, and a gate charge (Qg) of 1.8 nC at 4.5 V. It is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, ideal for high-density designs. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in various consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 145 pF @ 15 V |